RVSY018 系列

  • 相对峰值电压检测，确保有效开通性能
  • 可编程智能限压导通，适配同步整流 MOS 管
  • 支持 DCM 与 CCM 工作模式
  • 超快关断延迟：10ns；开通延迟：30ns
  • 可编程关断阈值
  • 可编程消隐时间
  • 支持最高 700kHz 工作频率
  • 大功率自供电，无需辅助绕组
  • 支持高压侧与低压侧同步整流
  • 检测引脚采用抗负压设计，可耐受体二极管产生的负压
  • 工业级工作温度范围：-40℃～125℃
  • SOT23-6 封装

RVSY018 是一款高性能同步整流（SR）控制器，设计用于支持深度连续导通模式（CCM）与断续导通模式（DCM）。其工作频率最高可达 700kHz，非常适合高速电源转换应用。关键功能参数可通过外接电阻编程设定，从而根据所选同步整流 MOSFET 的特性灵活配置与优化，提升系统整体性能。

RVSY018 采用相对峰值电压检测技术，可实现对同步整流 MOSFET 的精准开通，有效避免 DCM 模式下谐振负压带来的误触发问题。芯片同时兼容准谐振（QR）、有源钳位反激（ACF）等软开关拓扑。智能限压导通功能可在 VDS 压降极小时动态降低栅极驱动电压，提高 MOSFET 内阻，防止过早关断并减小导通损耗，进而提升整体效率。

控制器通过 VD 引脚监测同步整流 MOSFET 的漏极电压，该引脚内置 100μA 电流源。关断阈值可通过在 VD 引脚与同步整流 MOSFET 漏极之间外接电阻进行编程。此外，VD 到 VDD 通路可充当具备强劲供电能力的线性稳压器，通常无需外接辅助绕组。VD 引脚经过专门设计，可耐受负压瞬态冲击，即使在 VDS 出现大幅负压波动时，仍能保证内部电路稳定工作。

  产品编号 功率（W） 输入电压（V） 输出电压 1（V） 输出电流 1 (mA) 隔离电压 (kV)
1 RECOM | RVSY018-SR-CT | IC, SMD
重点 新
2 RECOM | RVSY018-SR-R | IC, SMD
重点 新
特性 RVSY018
Product Category IC
安装类型 SMD
封装类型 SOT23-6
长度 (mm) 3.02
宽度 (mm) 3
高度 (mm) 1.25
最低工作温度 (°C) -40
最高工作温度 (°C) 125
指令 Halogen-free, REACH, RoHS 2+ (10/10)
工作模式 Current Mode
质保 1 Year
Config 1 Channel
拓扑结构 Synchronous Rectifier
Supply Voltage (V) 4.7-100
MIN Supply Voltage (V) 4.7
MAX Supply Voltage (V) 100
Number of Phases 1
Functional Features Variable Switching Frequency
MAX Switching Frequency (kHz) 700
MIN Storage Temperature (°C) -55
MAX Storage Temperature (°C) 150
  产品编号 功率（W） 输出电压 1（V） 输入电压（V） 安装类型
1 RECOM | RVSY018-SR-CT | IC, SMD
重点 新
SMD
2 RECOM | RVSY018-SR-R | IC, SMD
重点 新
SMD
Important parameters include input voltage range, output voltage, maximum load current, switching frequency, efficiency, size, and thermal performance. Selection involves balancing these factors to meet the specific requirements of your application, ensuring the IC operates within its safe thermal and electrical limits while minimizing PCB space.
A boost converter increases the input voltage to a higher output voltage using an inductor, low-side switch, a rectifier, and output filter.
A buck converter reduces the input voltage to a lower output voltage using a high-frequency high-side or low-side switch, an inductor, a rectifier, and output filtering.
A buck‑boost converter can both increase and decrease the output voltage in relation to the input voltage using one or more inductors, a high-side or a low-side switch, rectifiers, and output filtering.
A DC/DC controller IC manages the switching behavior of external power components such as MOSFETs, inductors, and transformers.
A DC/DC converter IC converts one DC voltage level to another using switching techniques and integrated control circuitry.
A synchronous converter replaces the traditional rectifier diode with a MOSFET, which reduces conduction losses and significantly improves efficiency.
An asynchronous converter uses a diode as the rectification element, resulting in a simpler design but typically lower efficiency compared to synchronous alternatives.
A converter IC typically integrates the power switches internally, providing a more compact solution. In contrast, a controller IC manages the switching behavior of external power components such as MOSFETs, inductors, and transformers.
Buck-boost converters are commonly used when the input voltage can vary above and below the desired output voltage. For example, this topology is ideal for maintaining a 12V fixed voltage from a 12V battery supply, where the battery level may fluctuate during discharge or charging.
Push-pull and full bridge topologies are often unregulated, making them best suited for use with regulated input voltage rails. Push-pull is preferred for 3.3V and 5V input voltage rails because the input current is shared between the switching transistors, allowing more power to be extracted from a smaller IC package. Full Bridge is preferred for 5V up to 24V input voltage rails because the input voltage stress is shared between the switching transistors, enabling it to efficiently switch higher input voltages. For regulated output voltages, wider input voltage ranges, or higher output power applications, Flyback is the preferred topology due to its versatility and ability to provide galvanic isolation.
Power ICs enable efficient switching topologies, optimized control algorithms, and fast switching frequencies that minimize power losses.
Key advantages include high integration, a small footprint, and improved efficiency. Integrated power ICs allow designers to create optimized power solutions tailored specifically for unique applications.
Power ICs typically require more external components and careful PCB design. This requirement for additional external parts and complex layout increases overall development complexity.
Common types include DC/DC converter ICs, PWM controller ICs, gate driver ICs, PMICs, linear regulators, and battery management ICs.
Power ICs are used in industrial electronics, telecom systems, consumer electronics, automotive systems, and IoT devices.
A power IC (power integrated circuit) is a semiconductor device designed to regulate or convert electrical power. It integrates essential functions such as feedback regulation, switching control, protection, and power management into a single chip.
A PMIC is an integrated circuit designed to manage power distribution within complex electronic systems. It typically integrates multiple voltage regulators, power sequencing, battery management, and system monitoring functions into a single semiconductor device.
A power IC is a semiconductor controller chip that requires external magnetic components such as inductors or transformers but often includes integrated power switching transistors. A power module integrates many of these discrete components into a single packaged solution, simplifying PCB design and reducing overall development time.
Power switching transistors differ primarily in how they are controlled, their switching speed, maximum switching voltage, and their power-handling limits. The main types include MOSFETs (up to 100kHz, 600V, 1kW), SiCs (up to 500kHz, 3.3kV, 100kW), GaNs (up to 1MHz, 900V, 10kW), and IGBTs (up to 50kHz, 6.5kV, 1MW).

MOSFETs are most often used in switching power supplies due to their low cost and ease of integration. SiCs and GaNs are utilized for high-frequency switching applications, while IGBTs are preferred for very high power or high-voltage switching.
Power ICs are often utilized when designers require maximum flexibility, lower cost at high volumes, or highly customized power architectures.