RVSW013 系列

  • 可用于 PWM 控制与同步整流
  • 同步整流兼容连续导通模式（CCM）与断续导通模式（DCM）
  • 限压保护下的恒流补偿功能，实现恒流放电
  • 副边反馈（SSR）重载时可进入 CCM 模式
  • 副边反馈（SSR）极轻载时可进入间歇工作模式
  • 副边反馈（SSR）支持直连光耦接口
  • 轻载模拟降频，提升效率并降低空载功耗
  • 模式智能识别，实现双向控制
  • 内置低至 30mΩ 导通电阻的功率 MOSFET
  • 可编程最大峰值电流限制
  • 可编程软启动时间
  • 内置过温保护功能
  • 使能关断模式下电流低至 0.1μA
  • 内置自供电电路
  • QFN5×5 强散热封装

RVSW013 是一款双向变换器专用控制器，集成导通电阻低至 30mΩ 的功率 MOSFET。芯片支持两种工作模式：PWM 模式与同步整流模式，在同步整流模式下，内置功率 MOSFET 可作为同步整流管使用。芯片通过使能引脚实现两种模式的切换，支持无缝双向能量转换。

在 PWM 模式下，RVSW013 提供可选的限压保护功能，专为双向变换器应用设计。芯片在重载条件下工作于临界导通模式（CRM），并具备恒流补偿功能，可提升输出电流调节精度。此外，器件支持基于光耦的副边反馈（SSR 控制），重载时可进入连续导通模式（CCM），有助于减小变压器体积。轻载条件下，开关频率随负载降低而减小，提升轻载效率并降低空载功耗。

在同步整流模式下，PWM 模式中使用的同一颗内置功率 MOSFET 作为同步整流管工作。器件同时支持 CCM 与 DCM 模式，并可通过功率管漏极取能实现自供电运行，无需辅助绕组，简化了变压器设计与外围电路。

RVSW013 还具备智能模式识别功能，可可靠区分 PWM 模式与同步整流模式。在待机模式下，通过 EN 引脚关闭全部功能后，器件可实现零功耗。凭借超宽的工作电压范围，RVSW013 非常适合用于单节电池双向充放电应用。

  产品编号 功率（W） 输入电压（V） 输出电压 1（V） 输出电流 1 (mA) 隔离电压 (kV)
1 RECOM | RVSW013-FJ-CT | IC, SMD (pinless)
重点 新
2.5 - 10
2 RECOM | RVSW013-FJ-R | IC, SMD (pinless)
重点 新
2.5 - 10

IC 与变压器组合方案，板载 / 分立器件任意选

  产品编号 功率（W） 隔离电压 (kV) 输入电压（V） 主输出电压（V） 原边 IC 变压器 副边 IC
1
新
6 6 16 - 32 2.5 ‐ 4
特性 RVSW013
Product Category IC
输入电压（V） 2.5 - 10
主输出电压（V） 2.5 ‐ 10
输出电压范围（V） 2.5 - 10
MAX Iout (mA) 6
安装类型 SMD (无引脚）
封装类型 QFN5x5
长度 (mm) 5.1
宽度 (mm) 5.1
高度 (mm) 0.8
最低工作温度 (°C) -40
最高工作温度 (°C) 125
保护功能 OCP, OTP
指令 Halogen-free, REACH, RoHS 2+ (10/10)
工作模式 Current Mode
质保 1 Year
Config 1 Channel
拓扑结构 Flyback Bidirectional
Number of Phases 1
MAX Duty Cycle (%) 84
Functional Features Bidirectional Mode, Enable, Synchronous Rectification, Variable Switching Frequency
MIN Switching Frequency (kHz) 1.4
MAX Switching Frequency (kHz) 360
MIN Storage Temperature (°C) -55
MAX Storage Temperature (°C) 150
  产品编号 功率（W） 输出电压 1（V） 输入电压（V） 安装类型
1 RECOM | RVSW013-FJ-CT | IC, SMD (pinless)
重点 新
2.5 - 10 SMD (无引脚）
2 RECOM | RVSW013-FJ-R | IC, SMD (pinless)
重点 新
2.5 - 10 SMD (无引脚）

文件

标题 类型 日期
RVSW013.pdf Datasheet
Important parameters include input voltage range, output voltage, maximum load current, switching frequency, efficiency, size, and thermal performance. Selection involves balancing these factors to meet the specific requirements of your application, ensuring the IC operates within its safe thermal and electrical limits while minimizing PCB space.
A boost converter increases the input voltage to a higher output voltage using an inductor, low-side switch, a rectifier, and output filter.
A buck converter reduces the input voltage to a lower output voltage using a high-frequency high-side or low-side switch, an inductor, a rectifier, and output filtering.
A buck‑boost converter can both increase and decrease the output voltage in relation to the input voltage using one or more inductors, a high-side or a low-side switch, rectifiers, and output filtering.
A DC/DC controller IC manages the switching behavior of external power components such as MOSFETs, inductors, and transformers.
A DC/DC converter IC converts one DC voltage level to another using switching techniques and integrated control circuitry.
A synchronous converter replaces the traditional rectifier diode with a MOSFET, which reduces conduction losses and significantly improves efficiency.
An asynchronous converter uses a diode as the rectification element, resulting in a simpler design but typically lower efficiency compared to synchronous alternatives.
A converter IC typically integrates the power switches internally, providing a more compact solution. In contrast, a controller IC manages the switching behavior of external power components such as MOSFETs, inductors, and transformers.
Buck-boost converters are commonly used when the input voltage can vary above and below the desired output voltage. For example, this topology is ideal for maintaining a 12V fixed voltage from a 12V battery supply, where the battery level may fluctuate during discharge or charging.
Push-pull and full bridge topologies are often unregulated, making them best suited for use with regulated input voltage rails. Push-pull is preferred for 3.3V and 5V input voltage rails because the input current is shared between the switching transistors, allowing more power to be extracted from a smaller IC package. Full Bridge is preferred for 5V up to 24V input voltage rails because the input voltage stress is shared between the switching transistors, enabling it to efficiently switch higher input voltages. For regulated output voltages, wider input voltage ranges, or higher output power applications, Flyback is the preferred topology due to its versatility and ability to provide galvanic isolation.
Power ICs enable efficient switching topologies, optimized control algorithms, and fast switching frequencies that minimize power losses.
Key advantages include high integration, a small footprint, and improved efficiency. Integrated power ICs allow designers to create optimized power solutions tailored specifically for unique applications.
Power ICs typically require more external components and careful PCB design. This requirement for additional external parts and complex layout increases overall development complexity.
Common types include DC/DC converter ICs, PWM controller ICs, gate driver ICs, PMICs, linear regulators, and battery management ICs.
Power ICs are used in industrial electronics, telecom systems, consumer electronics, automotive systems, and IoT devices.
A power IC (power integrated circuit) is a semiconductor device designed to regulate or convert electrical power. It integrates essential functions such as feedback regulation, switching control, protection, and power management into a single chip.
A PMIC is an integrated circuit designed to manage power distribution within complex electronic systems. It typically integrates multiple voltage regulators, power sequencing, battery management, and system monitoring functions into a single semiconductor device.
A power IC is a semiconductor controller chip that requires external magnetic components such as inductors or transformers but often includes integrated power switching transistors. A power module integrates many of these discrete components into a single packaged solution, simplifying PCB design and reducing overall development time.
Power switching transistors differ primarily in how they are controlled, their switching speed, maximum switching voltage, and their power-handling limits. The main types include MOSFETs (up to 100kHz, 600V, 1kW), SiCs (up to 500kHz, 3.3kV, 100kW), GaNs (up to 1MHz, 900V, 10kW), and IGBTs (up to 50kHz, 6.5kV, 1MW).

MOSFETs are most often used in switching power supplies due to their low cost and ease of integration. SiCs and GaNs are utilized for high-frequency switching applications, while IGBTs are preferred for very high power or high-voltage switching.
Power ICs are often utilized when designers require maximum flexibility, lower cost at high volumes, or highly customized power architectures.