RVPW016-FJH-CT
)
RVPW016 是一款高集成度 DC‑DC 控制器，设计用于支持多种电源转换拓扑结构与输出电压反馈方式。芯片内置启动电路，可兼容 4V～100V 超宽输入电压范围。为防止电流倒灌，内部集成二极管可阻断电流从 VDD 流向 VIN。
芯片采用内置差分放大器进行电流采样，显著提升信噪比（SNR）。电流检测阈值电压设定为 156mV，在电流检测电路的性能与低功耗之间实现有效平衡。该设计无需使用电流互感器，从而降低系统成本并提高可靠性。
重载条件下，RVPW016 以最大开关频率工作，开关频率可通过外接电阻编程设定。随着负载降低，控制器会线性降低开关频率以保持高效率。这种自适应调频机制同时减小轻载输出纹波与空载功耗。
该器件支持工作频率高达数百 kHz 的原边反馈（PSR）。其内置输出电压采样电路兼容连续导通模式（CCM）与断续导通模式（DCM），最小采样脉冲宽度为 350ns。芯片内置环路补偿电路，动态响应快，可提升系统稳定性与瞬态性能。
为保证高系统可靠性，RVPW016 集成带迟滞、可精准调节的欠压锁定（UVLO），以及输出短路保护（SCP）、输出过压保护（OVP）和过温保护（OTP）。
IC 与变压器组合方案，板载 / 分立器件任意选
| 产品编号 | 功率（W） | 隔离电压 (kV) | 输入电压（V） | 主输出电压（V） | 原边 IC | 变压器 | 副边 IC | |||
|---|---|---|---|---|---|---|---|---|---|---|
| 1 |
DS-RVPW016-RBE-029-2415D-1
新
| 10 | 1.5 | 9 - 36 | ± 15 |
RVPW016
|
| 特性 | RVPW016-FJH-CT |
|---|---|
| Product Category | IC |
| 安装类型 | SMD |
| 封装类型 | MSOP-10 |
| 长度 (mm) | 3.1 |
| 宽度 (mm) | 5.1 |
| 高度 (mm) | 1.1 |
| 最低工作温度 (°C) | -40 |
| 最高工作温度 (°C) | 125 |
| 保护功能 | OCP, OTP, UVLO |
| 指令 | Halogen-free, REACH, RoHS 2+ (10/10) |
| 包装类型 | 防潮袋 |
| 工作模式 | Current Mode |
| 质保 | 1 Year |
| Config | 1 Channel |
| 拓扑结构 | Flyback |
| Supply Voltage (V) | 4-100 |
| MIN Supply Voltage (V) | 4 |
| MAX Supply Voltage (V) | 100 |
| Number of Phases | 1 |
| MAX Duty Cycle (%) | 80 |
| Functional Features | Variable Switching Frequency |
| MIN Switching Frequency (kHz) | 5.2 |
| MAX Switching Frequency (kHz) | 620 |
| MIN Storage Temperature (°C) | -55 |
| MAX Storage Temperature (°C) | 150 |
文件
| 标题 | 类型 | 日期 |
|---|---|---|
| RVPW016.pdf | Datasheet | |
| RVPW016.STEP | 2D/3D | 2025-10-13 |
Links
| 标题 | 类型 | 日期 |
|---|---|---|
| 隔离式 DC/DC 转换器：采用分立方案，还是使用集成模块？ | Whitepaper | 2026-5-11 |
| 面向分布式电源架构的隔离式 DC/DC 电源IC及分立电源解决方案 | Blog Article | 2026-3-13 |
Important parameters include input voltage range, output voltage, maximum load current, switching frequency, efficiency, size, and thermal performance. Selection involves balancing these factors to meet the specific requirements of your application, ensuring the IC operates within its safe thermal and electrical limits while minimizing PCB space.
A boost converter increases the input voltage to a higher output voltage using an inductor, low-side switch, a rectifier, and output filter.
A buck converter reduces the input voltage to a lower output voltage using a high-frequency high-side or low-side switch, an inductor, a rectifier, and output filtering.
A buck‑boost converter can both increase and decrease the output voltage in relation to the input voltage using one or more inductors, a high-side or a low-side switch, rectifiers, and output filtering.
A DC/DC controller IC manages the switching behavior of external power components such as MOSFETs, inductors, and transformers.
A DC/DC converter IC converts one DC voltage level to another using switching techniques and integrated control circuitry.
A synchronous converter replaces the traditional rectifier diode with a MOSFET, which reduces conduction losses and significantly improves efficiency.
An asynchronous converter uses a diode as the rectification element, resulting in a simpler design but typically lower efficiency compared to synchronous alternatives.
A converter IC typically integrates the power switches internally, providing a more compact solution. In contrast, a controller IC manages the switching behavior of external power components such as MOSFETs, inductors, and transformers.
Buck-boost converters are commonly used when the input voltage can vary above and below the desired output voltage. For example, this topology is ideal for maintaining a 12V fixed voltage from a 12V battery supply, where the battery level may fluctuate during discharge or charging.
Push-pull and full bridge topologies are often unregulated, making them best suited for use with regulated input voltage rails. Push-pull is preferred for 3.3V and 5V input voltage rails because the input current is shared between the switching transistors, allowing more power to be extracted from a smaller IC package. Full Bridge is preferred for 5V up to 24V input voltage rails because the input voltage stress is shared between the switching transistors, enabling it to efficiently switch higher input voltages. For regulated output voltages, wider input voltage ranges, or higher output power applications, Flyback is the preferred topology due to its versatility and ability to provide galvanic isolation.
Power ICs enable efficient switching topologies, optimized control algorithms, and fast switching frequencies that minimize power losses.
Key advantages include high integration, a small footprint, and improved efficiency. Integrated power ICs allow designers to create optimized power solutions tailored specifically for unique applications.
Power ICs typically require more external components and careful PCB design. This requirement for additional external parts and complex layout increases overall development complexity.
Common types include DC/DC converter ICs, PWM controller ICs, gate driver ICs, PMICs, linear regulators, and battery management ICs.
Power ICs are used in industrial electronics, telecom systems, consumer electronics, automotive systems, and IoT devices.
A power IC (power integrated circuit) is a semiconductor device designed to regulate or convert electrical power. It integrates essential functions such as feedback regulation, switching control, protection, and power management into a single chip.
A PMIC is an integrated circuit designed to manage power distribution within complex electronic systems. It typically integrates multiple voltage regulators, power sequencing, battery management, and system monitoring functions into a single semiconductor device.
A power IC is a semiconductor controller chip that requires external magnetic components such as inductors or transformers but often includes integrated power switching transistors. A power module integrates many of these discrete components into a single packaged solution, simplifying PCB design and reducing overall development time.
Power switching transistors differ primarily in how they are controlled, their switching speed, maximum switching voltage, and their power-handling limits. The main types include MOSFETs (up to 100kHz, 600V, 1kW), SiCs (up to 500kHz, 3.3kV, 100kW), GaNs (up to 1MHz, 900V, 10kW), and IGBTs (up to 50kHz, 6.5kV, 1MW).
MOSFETs are most often used in switching power supplies due to their low cost and ease of integration. SiCs and GaNs are utilized for high-frequency switching applications, while IGBTs are preferred for very high power or high-voltage switching.
MOSFETs are most often used in switching power supplies due to their low cost and ease of integration. SiCs and GaNs are utilized for high-frequency switching applications, while IGBTs are preferred for very high power or high-voltage switching.
Power ICs are often utilized when designers require maximum flexibility, lower cost at high volumes, or highly customized power architectures.
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